STMicroelectronics has released a silicon carbide T-switch module for three-level dc-dc converter topologies (right), and also a single-phase full-bridge.
Both are rated at 1.2kV, 75A and contain four of the company’s second-generation 13mΩ SiC mosfets, in its 48 x 57mm Acepack power package which can be press-fitted or soldered.
The package (left) has Cu-Al2O3-Cu substrates for good thermal conductivity.
Junction to heatsink conductivity is ~0.46°C/W in the T-switch part (A2U12M12W2-F2). Insulation is UL-certified to 2.5kVrms.
“Our power modules leverage the properties of silicon carbide and a high thermal performance substrate, resulting in a good low on-resistance per area and switching
performance that is virtually independent of temperature,” according to the company.
Switching at up to 30kHz is envisaged, with efficiency around 98 – 99%, and an embedded thermistor allows a host to keep an eye on temperature.
Specifications for the A2F12M12W2-F1 (right) are similar.
Applications are foreseen in industrial motor drives, solar inverters, uninterruptible power supplies and charging stations.
The product pages are here
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