GaN transistor with integrated driver for 45W chargers


“NV6014 is a new device, fully-qualified and in mass production but not yet available to the broader customer base,” a spokeswoman for Navitas told Electronics Weekly.

Details of the IC are not yet available, but the Samsung charger is rated at 45W and is said to have “the highest power density of any Samsung charger”, according to Navitas.

Navitas, founded in 2014, has based its business on integrating gate drivers with GaN power transistors – removing the need for adopters to design the driver-gate interface. It describes them as ‘‘digital-in, power-out building blocks”.

The interface is more critical with fast-switching GaN power devices than with silicon mosfets, and particularly vulnerable to parasitic capacitance and inductance.

DELA DISCOUNT Navitas-NV6014-Samsung-charger-297x300 GaN transistor with integrated driver for 45W chargers DELA DISCOUNT

The Samsung 45W charger (model EP-T4510) is 47 x 28 x 44mm and “delivers fast-charging power across the complete USB-PD and PPS specification”, said Navitas. It is intended to work with Galaxy S22 Ultra and S22+ phones.





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