This is the first tape-out of Weebit ReRAM in 22nm, one of the industry’s most common process nodes, and a geometry where embedded flash is not viable.
Weebit worked with its development partners CEA-Leti and CEA-List to successfully scale its ReRAM technology down to 22nm.
The teams designed a full IP memory module that integrates a multi-megabit ReRAM block targeting the 22nm FD-SOI process which is designed for connected and ultra-low power applications such as IoT and edge AI.
As embedded flash is unable to scale below 28nm, new NVM technology is needed for smaller process geometries.
Weebit ReRAM in 22nm FD-SOI offers a low-power, cost-effective embedded NVM solution which can withstand harsh environmental conditions.
Coby Hanoch, CEO of Weebit Nano, said: “We’re delighted to have taped-out on schedule our first demo chip in 22nm.
Embedded NVM is a key element of such designs, but since embedded flash is difficult to scale below 28nm, many companies are looking to emerging technologies like ReRAM.”
Olivier Faynot, Head of Silicon Component Division, CEA-Leti, said: “FD-SOI technology provides high performance with low voltages and low leakage to enable devices to operate at higher frequencies with better energy efficiency.”
Weebit’s embedded ReRAM module includes an 8Mb ReRAM array, control logic, decoders, IOs (Input/Output communication elements) and error correcting code (ECC).
It is designed with patent-pending analogue and digital circuitry running smart algorithms that significantly enhance the memory array’s technical parameters. Among other benefits, Weebit’s ReRAM technology excels in harsh environmental conditions including high temperatures, radiation and electro-magnetic fields, making it ideal for applications such as IoT, medical, automotive and industrial.
The demo chips comprise a full sub-system for embedded applications, including the Weebit ReRAM module, a RISC-V microcontroller (MCU), system interfaces, memories and peripherals.
